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BAT46WJ Datasheet, PDF (1/12 Pages) NXP Semiconductors – Single Schottky barrier diode
BAT46WJ
Single Schottky barrier diode
Rev. 2 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
 Low forward voltage
 Reverse voltage VR  100 V
 Very small and flat lead SMD plastic
package
 Low capacitance
 AEC-Q101 qualified
1.3 Applications
 High-speed switching
 Line termination
 Voltage clamping
 Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
VR
VF
IR
Quick reference data
Parameter
reverse voltage
forward voltage
reverse current
[1] Pulse test: tp  300 s;   0.02.
2. Pinning information
Conditions
IF = 250 mA
VR = 75 V
Min Typ Max Unit
-
-
100 V
[1] -
-
850 mV
[1] -
-
4
A
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001