BAT46WJ Datasheet, PDF(4/12 Page) NXP Semiconductors

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BAT46WJ Datasheet, PDF (4/12 Pages) NXP Semiconductors – Single Schottky barrier diode

◁

NXP Semiconductors

BAT46WJ

Single Schottky barrier diode

7. Characteristics

Table 7. Characteristics

Tamb = 25 ï°C unless otherwise specified.

Symbol Parameter

Conditions

forward voltage

IF = 0.1 mA

IF = 10 mA

IF = 10 mA; Tj = ï40 ï°C

IF = 50 mA

IF = 50 mA; Tj = ï40 ï°C

IF = 250 mA

reverse current

VR = 1.5 V

VR = 1.5 V; Tj = 60 ï°C

VR = 10 V

VR = 10 V; Tj = 60 ï°C

VR = 50 V

VR = 50 V; Tj = 60 ï°C

VR = 75 V

VR = 75 V; Tj = 60 ï°C

VR = 100 V

VR = 100 V; Tj = 60 ï°C

VR = 100 V; Tj = 85 ï°C

diode capacitance

f = 1 MHz

VR = 0 V

VR = 1 V

trr

reverse recovery time

Min Typ

[1]

175

315

415

710

[1]

0.2

0.3

0.7

[2] -

5.9

[1] Pulse test: tp ï£ 300 ïs; ï¤ ï£ 0.02.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ï; measured at IR = 1 mA.

Max Unit

200 mV

350 mV

470 mV

475 mV

560 mV

850 mV

0.5 ïA

12 ïA

0.8 ïA

20 ïA

ïA

44 ïA

ïA

80 ïA

ïA

120 ïA

600 ïA

39 pF

21 pF

BAT46WJ

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 â 8 November 2011

4 of 12

▷