MRF1518NT1 Datasheet, PDF (8/20 Pages) Motorola, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 400 - 470 MHz
17
15
440 MHz
13
400 MHz
470 MHz
11
9
V_DD = 12.5 Vdc
7
5
0 1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS)
Figure 22. Gain versus Output Power
80
70
470 MHz
440 MHz
60
400 MHz
50
40
30
20
V_DD = 12.5 Vdc
10
0
0 1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS)
Figure 23. Drain Efficiency versus Output
Power
12
440 MHz
10
400 MHz
470 MHz
8
6
4
2
V_DD = 12.5 Vdc
P_in = 26.8 dBm
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 24. Output Power versus
Biasing Current
12
440 MHz
11
10
400 MHz
9
8
7
6
470 MHz
5
4
I_DQ = 150 mA
3
P_in = 26.8 dBm
2
8 9 10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus
Supply Voltage
70
470 MHz
65
440 MHz
60
400 MHz
55
50
45
40
V_DD = 12.5 Vdc
P_in = 26.8 dBm
35
30
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 25. Drain Efficiency versus
Biasing Current
80
75
70
65
470 MHz
60
55
440 MHz
50
400 MHz
45
40
I_DQ = 150 mA
35
P_in = 26.8 dBm
30
8 9 10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 27. Drain Efficiency versus
Supply Voltage
MRF1518NT1 MRF1518T1
8
RF Device Data
Freescale Semiconductor