MRF1518NT1 Datasheet, PDF (4/20 Pages) Motorola, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 450 - 520 MHz
17
450 MHz ^{470 MHz}
15
13
520 MHz
500 MHz
11
9
7
V_DD = 12.5 Vdc
5
0 1 2 3 4 5 6 7 8 9 10 11
P_out, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
80
470 MHz
70
450 MHz
60
50
520 MHz
40
500 MHz
30
20
V_DD = 12.5 Vdc
10
0
0 1 2 3 4 5 6 7 8 9 10 11 12
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
12
10 470 MHz
450 MHz
8
520 MHz
6 500 MHz
4
2
V_DD = 12.5 Vdc
P_in = 26.2 dBm
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
12
470 MHz
11
450 MHz
10
9
8
7
6
520 MHz
5
500 MHz
4
I_DQ = 150 mA
3
P_in = 26.2 dBm
2
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
70
470 MHz
65
450 MHz
60
500 MHz
55
520 MHz
50
45
40
35
V_DD = 12.5 Vdc
P_in = 26.2 dBm
30
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus
Biasing Current
80
75
70
470 MHz
65
60
450 MHz
55
520 MHz
50
500 MHz
45
40
I_DQ = 150 mA
35
P_in = 26.2 dBm
30
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1518NT1 MRF1518T1
4
RF Device Data
Freescale Semiconductor