MRF1518NT1 Datasheet, PDF(2/20 Page) Motorola, Inc – RF Power Field Effect Transistor

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MRF1518NT1 Datasheet, PDF (2/20 Pages) Motorola, Inc – RF Power Field Effect Transistor

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

IDSS

IGSS

ÂµAdc

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 100 ÂµA)

VGS(th)

1.0

1.6

2.1

Vdc

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

0.4

Vdc

Dynamic Characteristics

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Ciss

Coss

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Crss

4.5

Functional Tests (In Freescale Test Fixture)

Common- Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

Gps

Î·

MRF1518NT1 MRF1518T1

RF Device Data

Freescale Semiconductor

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