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MRF1518NT1 Datasheet, PDF (10/20 Pages) Motorola, Inc – RF Power Field Effect Transistor
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TYPICAL CHARACTERISTICS, 135 - 175 MHz
19
135 MHz
17
175 MHz
15
155 MHz
13
11
9
VDD = 12.5 Vdc
7
0 1 2 3 4 5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS)
Figure 31. Gain versus Output Power
80
70
60
155 MHz
135 MHz
50
175 MHz
40
30
20
VDD = 12.5 Vdc
10
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS)
Figure 32. Drain Efficiency versus Output
Power
12
10
155 MHz
8
135 MHz
6
175 MHz
4
2
VDD = 12.5 Vdc
Pin = 24.5 dBm
0
0
200
400
600
800
1000
IDQ, BIASING CURRENT (mA)
Figure 33. Output Power versus
Biasing Current
12
135 MHz
11
155 MHz
10
175 MHz
9
8
7
6
5
4
IDQ = 150 mA
Pin = 24.5 dBm
3
2
8 9 10 11 12 13 14 15 16
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 35. Output Power versus
Supply Voltage
MRF1518NT1 MRF1518T1
10
70
65
155 MHz
135 MHz
60
175 MHz
55
50
45
40
VDD = 12.5 Vdc
35
Pin = 24.5 dBm
30
0
200
400
600
800
1000
IDQ, BIASING CURRENT (mA)
Figure 34. Drain Efficiency versus
Biasing Current
80
75
70
155 MHz
65
135 MHz
60
175 MHz
55
50
45
40
IDQ = 150 mA
35
Pin = 24.5 dBm
30
8
9
10 11 12 13 14 15 16
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 36. Drain Efficiency versus
Supply Voltage
RF Device Data
Freescale Semiconductor
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