MRF587 Datasheet, PDF (7/8 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

VBB
C4
VCC
C5
R2
C3
R3
T1
RF
INPUT
L1
C2
C1
T2
C6
DUT
R1
C8
VCC = 15 V
Pg = 11 dB
f = 5 – 375 MHz
Zo = 75 Ω
RF
OUTPUT
C7
C1, C7 — 0.5 – 10 pF
C2, C6 — 0.001 µF
C3 — 0.01 µF
C4, C5 — 0.01 µF Feedthru
C8 — 12 pF
R1 — 12 Ω 1.0 W (2.0 – 24 Ω on each emitter port)
R2 — 1.8 k 1/8 W
R3 — 2.2 k 1/8 W
L1 — 1 Turn 0.012 dia #22 AWG
T1(1) — 5 Turns Tapped at 2 Turns, #30 AWG
T2(1) — 8 Turns Tapped at 3 Turns, #30 AWG
(1) Ferroxcube 135 CT050 3D3 Material
Figure 16. Broadband Test Circuit Schematic
PRef
PRef
DISTORTION
f2 – f1
f1
f2
f1 + f2
Figure 17. Second Order Distortion Test
DISTORTION
PRef
UNMODULATED
CARRIER
100%
MODULATION
15 kHz
Figure 19. Cross Modulation Distortion Test
MOTOROLA RF DEVICE DATA
DISTORTION
f1
f2
f3
Figure 18. Triple Beat Distortion Test
VRef
– 6 dB
199 MHz
– 60 dB
211 MHz
f1
193 MHz
f2
205 MHz
217 MHz
f3
Figure 20. DIN 45004B Intermodulation Test
MRF587
7