MRF587 Datasheet, PDF (1/8 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
• Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
• High Power Gain —
GU(max) = 16.5 dB (Typ) @ f = 500 MHz
• Ion Implanted
• All Gold Metal System
• High fT — 5.5 GHz
• Low Intermodulation Distortion:
TB3 = – 70 dB
DIN = 125 dB µV
• Nichrome Emitter Ballast Resistors
Order this document
by MRF587/D
MRF587
NF = 3.0 dB @ 0.5 GHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above TC = 50°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
17
34
2.5
200
5.0
33
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
17
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
34
Emitter–Base Breakdown Voltage
(IC = 0, IE = 0.1 mAdc)
V(BR)EBO
2.5
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
—
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
50
NOTE:
1. 300 µs pulse on Tektronix 576 or equivalent.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 244A–01, STYLE 1
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
50
µAdc
—
200
—
(continued)
MRF587
1