MRF587 Datasheet, PDF (3/8 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

20
f = 500 MHz
VCE = 15 V
16
6
VCE = 15 V
5
12
4
8
3
4
2
f = 1000 MHz
0
0
50
100
150
200
IC, COLLECTOR CURRENT (mA)
Figure 3. GUmax versus Collector Current
1
0
50
100
150
200
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain–Bandwidth Product versus
Collector Current
TYPICAL PERFORMANCE
7
10
7
6
5
5
VCC = 15 V
f = 300 MHz
3
4
CIRCUIT PER
FIGURE 16
2
3
Cob
Ccb
2
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 5. Broadband Noise Figure
1
1
2
3
5
7
10
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 6. Junction Capacitance versus Voltage
80
31
29
76
27
25
72
68
CIRCUIT PER
FIGURE 16
64
23
VCC = 15 V
f = 200 MHz
21
19
17
15
13
60
11
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 7. 1.0 dB Compression Point versus
Collector Current
60
50
3RD ORDER
INTERCEPT
40
+1 dB
COMP. PT.
30
CIRCUIT PER
FIGURE 16
f1 = 205 MHz
20
f2 = 211 MHz
VCC = 15 V
IC = 90 mA
10
0
10 20 30 40 50 60 70 80
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intercept Point
MOTOROLA RF DEVICE DATA
MRF587
3