MRF587 Datasheet, PDF (2/8 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz)
fT
—
5.5
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
1.7
FUNCTIONAL TESTS
Narrowband — Figure 15
(IC = 90 mA, VCC = 15 V, f = 0.5 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
Broadband — Figure 16
(IC = 90 mA, VCC = 15 V, f = 0.3 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
Triple Beat Distortion
(IC = 50 mA, VCC = 15 V, PRef = 50 dBmV)
(IC = 90 mA, VCC = 15 V, PRef = 50 dBmV)
NF
—
3.0
GNF
11
13
NF
GNF
TB3
—
6.3
—
11
—
– 70
DIN 45004
(IC = 90 mA, VCC = 15 V)
(IC = 90 mA, VCC = 15 V)
DIN
—
125
Maximum Available Power Gain (3)
(IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz)
NOTES:
2. Characterized on HP8542 Automatic Network Analyzer
3.
GUmax
=
|S21|2
(1 – |S11|2)(1 – |S22|2)
GUmax
—
16.5
Max
Unit
—
GHz
2.2
pF
dB
4.0
—
dB
—
—
—
dB
—
dBµV
—
dB
10
9
8
7
6
5
4
3
2
1
0
0.1
30
VCE = 15 V
27
IC = 90 mA
24
GNF
21
18
15
N.F.
0.2
0.3
0.5
f, FREQUENCY (GHz)
12
9
6
3
0
0.7 0.9 10
Figure 1. Typical Noise Figure and
Associated Gain versus Frequency
6
VCE = 15 V
5 ^{f = 300 MHz}
4
3
2
1
0
50
100
150
200
IC, COLLECTOR CURRENT (mA)
Figure 2. Noise Figure versus Collector Current
MRF587
2
MOTOROLA RF DEVICE DATA