|
MRF1535T1 Datasheet, PDF (7/16 Pages) Motorola, Inc – RF Power Field Effect Transistor | |||
|
◁ |
Zo = 10 â¦
ZOL*
f = 175 MHz
f = 175 MHz f = 135 MHz
Zin
f = 135 MHz
ZOL*
f = 520 MHz
f = 450 MHz
f = 450 MHz f = 520 MHz
Zin
VDD = 12.5 V, IDQ = 250 mA, Pout = 35 W
f
Zin
MHz
â¦
ZOL*
â¦
135
5.0 + j0.9 1.7 + j0.2
155
5.0 + j0.9 1.7 + j0.2
175
3.0 + j1.0 1.3 + j0.1
VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W
f
Zin
MHz
â¦
ZOL*
â¦
450
0.8 â j1.4 1.0 â j0.8
470
0.9 â j1.4 1.1 â j0.6
500
1.0 â j1.4 1.1 â j0.6
520
0.9 â j1.4 1.1 â j0.5
Zin = Complex conjugate of source
impedance.
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z in
Z OL*
Figure 19. Series Equivalent Input and Output Impedance
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
7
|
▷ |