English
Language : 

MRF1535T1 Datasheet, PDF (2/16 Pages) Motorola, Inc – RF Power Field Effect Transistor
◁
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
Gate−Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 400 µA)
Drain−Source On−Voltage
(VGS = 5 Vdc, ID = 0.6 A)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF Characteristics (In Freescale Test Fixture)
Common−Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)
f = 520 MHz
Load Mismatch
(VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Symbol
Min Typ Max
Unit
V(BR)DSS
IDSS
IGSS
60
—
—
—
—
1
—
—
0.3
Vdc
µAdc
µAdc
VGS(th)
RDS(on)
VDS(on)
1
—
2.6
Vdc
—
—
0.7
Ω
—
—
1
Vdc
Ciss
Coss
Crss
—
—
250
pF
—
—
150
pF
—
—
20
pF
Gps
dB
10
—
—
η
%
50
—
—
Ψ
No Degradation in Output Power
Before and After Test
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
2
RF Device Data
Freescale Semiconductor
 ▷