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MRF1535T1 Datasheet, PDF (1/16 Pages) Motorola, Inc – RF Power Field Effect Transistor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large−signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Broadband−Full Power Across the Band: 135−175 MHz
400−470 MHz
450−520 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
• N Suffix Indicates Lead−Free Terminations
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1535T1
Rev. 6, 1/2005
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
520 MHz, 35 W, 12.5 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264−09, STYLE 1
TO−272
PLASTIC
MRF1535T1(NT1)
Table 1. Maximum Ratings
CASE 1264A−02, STYLE 1
TO−272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
Rating
Symbol
Value
Unit
Drain−Source Voltage
Gate−Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VDSS
VGS
ID
PD
−0.5, +40
± 20
6
135
0.50
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg
−65 to +150
°C
TJ
175
°C
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
0.90
°C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22−A113, IPC/JEDEC J−STD−020
1
260
°C
1.
Calculated based on the formula PD =
TJ – TC
RθJC
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1