MRF1511T1 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

f = 88 MHz ⁷⁷
Z_OL* ⁶⁶
Z_o = 10 Ω
f = 175 MHz
Z_in
155
135
Z_in
f = 88 MHz
77
66
f = 175 MHz
155
Z_OL*
135
V_DD = 7.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135
20.1 –j0.5 2.53 –j2.61
155
17.0 +j3.6 3.01 –j2.48
175
15.2 +j7.9 2.52 –j3.02
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
V_DD = 7.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
66
25.3 –j0.31 3.62 –j0.751
77
25.6 +j3.62 3.59 –j0.129
88
26.7 +j6.79 3.37 –j0.173
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 19. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF1511T1
7