MRF1511T1 Datasheet, PDF (4/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 135 – 175 MHz
16
155 MHz
14
135 MHz
12
175 MHz
70
155 MHz
60
135 MHz
50
175 MHz
40
10
8
6
12
V_DD = 7.5 V
3 45678
P_out, OUTPUT POWER (WATTS)
9 10
Figure 4. Gain versus Output Power
30
20
10
V_DD = 7.5 V
0
0 1 2 3 4 5 6 7 8 9 10
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
12
11
10
9
155 MHz
8
135 MHz
175 MHz
7
6
5
V_DD = 7.5 V
P_in = 27 dBm
4
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
14
12
10
175 MHz ^{135 MHz}
8
155 MHz
6
4
I_DQ = 150 mA
P_in = 27 dBm
2
4
6
8
10
12
14
16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
80
70
155 MHz
60
135 MHz
175 MHz
50
V_DD = 7.5 V
P_in = 27 dBm
40
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus
Biasing Current
80
70
155 MHz
60
135 MHz
175 MHz
50
40
30
4
6
I_DQ = 150 mA
P_in = 27 dBm
8
10
12
14
16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1511T1
4
MOTOROLA RF DEVICE DATA