MRF1511T1 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V_DS = 35 Vdc, V_GS = 0)
Gate–Source Leakage Current
(V_GS = 10 Vdc, V_DS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 7.5 Vdc, I_D = 170 µA)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V_DD = 7.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 175 MHz)
Drain Efficiency
(V_DD = 7.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 175 MHz)
I_DSS
—
—
I_GSS
—
—
1
µAdc
1
µAdc
V_GS(th)
1.0
1.6
2.1
Vdc
V_DS(on)
—
0.4
—
Vdc
C_iss
—
100
—
pF
C_oss
—
53
—
pF
C_rss
—
8
—
pF
G_ps
10
11.5
—
dB
η
50
55
—
%
MRF1511T1
2
MOTOROLA RF DEVICE DATA