MRF1511T1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1511T1 is designed for broadband commercial and industrial
applications at frequencies to 175 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 175 MHz, 7.5 Volts
D
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal ^G
Impedance Parameters
• Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Order this document
by MRF1511/D
MRF1511T1
175 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1)
Calculated
based
on
the
formula
P_D
=
TJ _– TC
R_θJC
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
40
±20
4
62.5
0.5
–65 to +150
150
Max
2
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF1511T1
1