MTB23P06E Datasheet, PDF (6/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

MTB23P06E
SAFE OPERATING AREA
100
70
100 µs
50
1 ms
10 µs
30
10 ms
dc
10
VGS = 20 V
7
SINGLE PULSE
5
TC = 25°C
3
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
1
2
4 6 8 10
20
40 60 80 100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1600
ID = 23 A
1400
1200
1000
800
600
400
200
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.01 0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.05 0.1 0.2
P(pk)
t1 _t2
DUTY CYCLE, D = t1/t2
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
0.5 1
2
5
t,TIME (ms)
10 20
Figure 13. Thermal Response
50 100 200
500 1000
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
3
R_θJA = 50°C/W
Board material = 0.065 mil FR–4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
6
Motorola TMOS Power MOSFET Transistor Device Data