MTB23P06E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
MTB23P06E
32
10 V
28 ^{TJ = 25°C}
8V
9V
24
7V
20
16
6V
12
8
VGS = 5 V
4
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE CHARACTERISTICS (VOLTS)
Figure 1. On–Region Characteristics
32
VDS ≥ 10 V
28
24
20
– 55°C
25°C
TJ = 150°C
16
12
8
4
00
2
4
6
8
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
VGS = 10 V
0.4
0.3
TJ = 150°C
0.2
25°C
0.1
– 55°C
00
4
8
12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.18
0.16 TJ = 25°C
0.14
0.12
VGS = 10 V
0.1
0.08
15 V
0.06
0.04
0.02
0
6 12 18 24 30 36 42 48
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
ID = 10 A
1.5
1
0.5
0
– 50 – 25
0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10000
4000 ^{TJ = 125°C}
2000 100°C
1000
400
200
25°C
100
40
20
VGS = 0 V
10
15 20 25 30 35 40 45 50 55 60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage Current
versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3