MTB23P06E Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

MTB23P06E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
Vdc
—
—
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IDSS
IGSS
µAdc
—
—
100
—
—
1000
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
4.0
Vdc
—
3.1
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 23 Adc)
(ID = 11.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 11.5 Adc)
RDS(on)
VDS(on)
gFS
—
0.094
0.12
Ohm
Vdc
—
2.21
3.3
—
—
3.0
5.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
1357
1900
pF
—
600
840
—
200
400
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
RG = 10 Ω)
(VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
18
36
ns
—
140
280
—
76
152
—
69
138
—
75
105
nC
—
9.0
—
—
37
—
—
27
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
2.2
3.5
—
1.85
—
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(IS = 23 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
—
120
—
ns
—
—
—
—
—
—
—
600
—
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data