MRF5S21130 Datasheet, PDF (6/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

35
-20
V_DD = 28 Vdc, I_DQ = 1200 mA, f1 = 2135 MHz,
η
30 ^{f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @}
-25
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
25 ^{@ 0.01% Probability (CCDF)}
IM3
-30
ACPR
20
-35
15
G_ps
-40
10
-45
5
-50
0
-55
5
10 15 20 25 30 35 40 45
P_out, OUTPUT POWER (WATTS) AVG. (W-CDMA)
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
-20
3.84 MHz
-30
Channel BW
-40
-50
-60
-70
-80
-90
-100
-110
-120
-25
-ACPR @ +ACPR @
-IM3 @
3.84 MHz BW 3.84 MHz BW
3.84 MHz BW
-20 -15 -10 -5 0 5 10
f, FREQUENCY (MHz)
+IM3 @
3.84 MHz BW
15 20 25
Figure 9. 2-Carrier W-CDMA Spectrum
100
10
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10⁹
10⁸
10⁷
10⁶
10⁵
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I_D2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
6
MOTOROLA RF DEVICE DATA