MRF5S21130 Datasheet, PDF (2/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
Symbol
R_θJC
Max
0.56
0.56
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
µAdc
I_DSS
—
—
1
µAdc
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1200 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 3 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
V_GS(th)
2.5
2.7
3.5
Vdc
V_GS(Q)
—
3.7
—
Vdc
V_DS(on)
—
0.26
0.3
Vdc
g_fs
—
7.5
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.6
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
G_ps
12
13.5
—
dB
(V_DD = 28 Vdc, P_out = 28 W Avg., I_DQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 28 W Avg., I_DQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
24
26
—
%
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 28 W Avg., I_DQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz
referenced to carrier channel power.)
–37
–35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 28 W Avg., I_DQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.)
–39
–37
dBc
Input Return Loss
IRL
—
–12
–9
dB
(V_DD = 28 Vdc, P_out = 28 W Avg., I_DQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(1) Part is internally matched both on input and output.
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
2
MOTOROLA RF DEVICE DATA