MRF5S21130 Datasheet, PDF (1/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF5S21130/D
The RF MOSFET Line
MRF5S21130
RF Power Field Effect Transistors _MRF5S21130R3
N–Channel Enhancement–Mode Lateral MOSFETs _MRF5S21130S
Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
MRF5S21130SR3
• Typical 2–carrier W–CDMA Performance for V_DD = 28 Volts,
I_DQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
2170 MHz, 28 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
CASE 465B–03, STYLE 1
NI–880
MRF5S21130
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V_DD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C–02, STYLE 1
NI–880S
MRF5S21130S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
CW
Value
65
–0.5, +15
315
2
–65 to +150
200
92
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
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MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
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