MRF5S21130 Datasheet, PDF (5/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
14
35
13
G_ps
30
η
12
25
V_DD = 28 Vdc, P_out = 28 W (Avg.), I_DQ = 1200 mA
11
2-Carrier W-CDMA, 10 MHz Carrier Spacing,
20
10 IRL
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
-28
-10
9
-32
-15
8 IM3
7 ^ACPR
-36
-20
-40
-25
6
-44
-30
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
15
I_DQ = 1600 mA
14.5
1400 mA
14 _{1200 mA}
13.5 ^{1000 mA}
13 ^{800 mA}
12.5
12
11.5
11
1
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
-25
-30
-35
I_DQ = 1600 mA
-40
1400 mA
-45
1200 mA
-50 _{800 mA}
-55
-60
-65
1
1000 mA
10
V_DD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two-Tone Measurement,
10 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
-25
3rd Order
-30
-35
-40 _{7th Order}
-45
5th Order
-50
-55
-60
0.1
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 1200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
1
10
100
TWO-TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
58
57
Ideal
56
P3dB = 53.02 dBm (200.5 W)
55
54
P1dB = 52.5 dBm (178 W)
53
Actual
52
V_DD = 28 Vdc, I_DQ = 1200 mA
51
Pulsed CW, 5 µsec(on), 1 msec(off)
50
Center Frequency = 2140 MHz
35
37
39
41
43
45
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
5