MMDF2C03HD Datasheet, PDF (6/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
N–Channel
1200
VDS = 0 V VGS = 0 V
Ciss
1000
TJ = 25°C
800
600 _Crss
Ciss
400
200
Coss
Crss
0
10 5
0
5 10 15 20 25 30
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
P–Channel
1200
VDS = 0 V VGS = 0 V
1000 ^Ciss
TJ = 25°C
800
600 ^Crss
400
200
Ciss
Coss
Crss
0
10 5
0
5 10 15 20 25 30
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
24
QT
9
VDS
18
VGS
6
12
Q1
Q2
3
6
Q3
ID = 3 A
TJ = 25°C
0
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
12
10
8
VDS
6
Q1
Q2
4
24
QT
20
VGS
16
ID = 2 A
12
TJ = 25°C
8
2
Q3
0
0
2
4
6
8 10 12
Qg, TOTAL GATE CHARGE (nC)
4
0
14 16
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
100
td(off)
tr
10
tf
td(on)
1000
VDD = 15 V
ID = 2 A
VGS = 10 V _tf
100
TJ = 25°C
td(off)
10
tr
td(on)
1
1
1
10
100
1
10
100
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
6
Motorola TMOS Power MOSFET Transistor Device Data