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MMDF2C03HD Datasheet, PDF (1/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C03HD/D
⢠Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS⢠devices are an advanced series of power MOSFETs
which utilize Motorolaâs High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
â¢
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in
portable and battery powered products such as computers,
D
printers, cellular and cordless phones. They can also be used for NâChannel
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected G
voltage transients.
⢠Ultra Low RDS(on) Provides Higher Efficiency and Extends
S
Battery Life
⢠Logic Level Gate Drive â Can Be Driven by Logic ICs
D
⢠Miniature SO-8 Surface Mount Package â Saves Board Space PâChannel
⢠Diode Is Characterized for Use In Bridge Circuits
⢠Diode Exhibits High Speed, With Soft Recovery
⢠IDSS Specified at Elevated Temperature
⢠Avalanche Energy Specified
G
⢠Mounting Information for SO-8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
S
Rating
MMDF2C03HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.070 OHM
(N-CHANNEL)
RDS(on) = 0.200 OHM
(P-CHANNEL)
CASE 751â05, Style 14
SOâ8
NâSource
NâGate
PâSource
PâGate
Symbol
18
27
36
45
Top View
Value
NâDrain
NâDrain
PâDrain
PâDrain
Unit
DrainâtoâSource Voltage
GateâtoâSource Voltage
Drain Current â Continuous NâChannel
PâChannel
Drain Current â Pulsed
NâChannel
PâChannel
VDSS
VGS
ID
IDM
30
Vdc
± 20
Vdc
4.1
A
3.0
21
15
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C (2)
Thermal Resistance â Junction to Ambient (2)
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 â¦)
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 â¦)
NâChannel
PâChannel
Maximum Lead Temperature for Soldering, 0.0625â³ from case. Time in Solder Bath is 10 seconds.
DEVICE MARKING
TJ, Tstg
PD
RθJA
EAS
TL
â 55 to 150
2.0
62.5
324
324
260
°C
Watts
°C/W
mJ
°C
D2C03
(1) Negative signs for PâChannel device omitted for clarity.
(2) Mounted on 2â square FR4 board (1â sq. 2 oz. Cu 0.06â thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2C03HDR2
13â³
12 mm embossed tape
2500 units
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
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