MMDF2C03HD Datasheet, PDF (2/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
—
30
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
(N)
—
(P)
—
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IGSS
—
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
(N)
1.0
(P)
1.0
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
—
(P)
—
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
—
(P)
—
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
2.0
(P)
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0
Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
(N)
—
(P)
—
(N)
—
(P)
—
(N)
—
(P)
—
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 3.0
Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
td(on)
tr
(N)
—
(P)
—
(N)
—
(P)
—
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 2.0
Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(off)
tf
(N)
—
(P)
—
(N)
—
(P)
—
Turn–On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 3.0
Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
tr
(N)
—
(P)
—
(N)
—
(P)
—
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 2.0
Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(off)
tf
(N)
—
(P)
—
(N)
—
(P)
—
Total Gate Charge
Gate–Source Charge
QT
(VDS = 10 Vdc, ID = 3.0 Adc,
Q1
VGS = 10 Vdc)
(N)
—
(P)
—
(N)
—
(P)
—
Gate–Drain Charge
(VDS = 24 Vdc, ID = 2.0 Adc,
Q2
VGS = 10 Vdc)
Q3
(N)
—
(P)
—
(N)
—
(P)
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
—
1.0
µAdc
—
1.0
—
100
nAdc
1.7
1.5
0.06
0.17
0.065
0.225
3.6
3.4
3.0
2.0
0.070
0.200
0.075
0.300
—
—
Vdc
Ohm
Ohm
mhos
450
630
pF
397
550
160
225
189
250
35
70
64
126
12
24
ns
16
32
65
130
18
36
16
32
63
126
19
38
194
390
8.0
16
9.0
18
15
30
10
20
30
60
81
162
23
46
192
384
11.5
16
nC
14.2
19
1.5
—
1.1
—
3.5
—
4.5
—
2.8
—
3.5
—
(continued)
2
Motorola TMOS Power MOSFET Transistor Device Data