MMDF2C03HD Datasheet, PDF (4/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MMDF2C03HD
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
0.6
ID = 1.5 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.6
ID = 1 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.08
TJ = 25°C
0.07
0.06
VGS = 4.5
10 V
0.30
TJ = 25°C
0.25
0.20
0.15
VGS = 4.5 V
10 V
0.05
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1.5 A
1.5
1.0
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
0.10
0 0.5 1 1.5 2 2.5 3 3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
ID = 2 A
1.4
1.2
1.0
0.8
0.6
– 50
– 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
4
Motorola TMOS Power MOSFET Transistor Device Data