MMDF2C02HD Datasheet, PDF (6/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

MMDF2C02HD
N–Channel
1400
VDS = 0 V
1200 _Ciss
VGS = 0 V
TJ = 25°C
1000
800
Crss
600
400
200
Ciss
Coss
Crss
10
5
0
5
10
15
20
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
1200
VDS = 0 V
1000 ^Ciss
P–Channel
VGS = 0 V
TJ = 25°C
800
600
Crss
Ciss
400
200
0
10
Coss
Crss
5
0
5
10
15
20
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
12
24
QT
10
20
VGS
8
16
6
4 ^Q1
Q2
ID = 3 A
12
TJ = 25°C
8
2
4
Q3
VDS
0
0
0
2
4
6
8
10
12
14
QT, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
12
18
QT
10
8
VDS
15
VGS
12
6
9
4 ^Q1
2
Q3
0
0
Q2
6
ID = 2 A
TJ = 25°C ₃
0
4
8
12
16
QT, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
100
VDD = 10 V
ID = 3 A
VGS = 10 V _tr
TJ = 25°C _td(off)
10
tf
td(on)
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
1000
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
100
td(off)
tf
tr
10
td(on)
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
6
Motorola TMOS Power MOSFET Transistor Device Data