MMDF2C02HD Datasheet, PDF (2/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

MMDF2C02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
V(BR)DSS
—
20
IDSS
(N)
—
(P)
—
IGSS
—
—
VGS(th)
—
1.0
RDS(on)
(N)
—
(P)
—
RDS(on)
(N)
—
(P)
—
gFS
(N)
2.0
(P)
2.0
Ciss
(N)
—
(P)
—
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
(N)
—
(P)
—
Transfer Capacitance
Crss
(N)
—
(P)
—
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
Rise Time
td(on)
(N)
—
(VDD = 10 Vdc, ID = 3.0 Adc,
(P)
—
VGS = 4.5 Vdc,
RG = 6.0 Ω)
tr
(N)
—
(P)
—
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
td(off)
(N)
—
VGS = 4.5 Vdc,
(P)
—
RG = 6.0 Ω)
tf
(N)
—
(P)
—
Turn–On Delay Time
Rise Time
td(on)
(N)
—
(VDD = 10 Vdc, ID = 3.0 Adc,
(P)
—
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
(N)
—
(P)
—
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
td(off)
(N)
(P)
—
—
RG = 6.0 Ω)
tf
(N)
—
(P)
—
Total Gate Charge
Gate–Source Charge
QT
(VDS = 16 Vdc, ID = 3.0 Adc,
Q1
VGS = 10 Vdc)
(N)
—
(P)
—
(N)
—
(P)
—
Gate–Drain Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
Q2
VGS = 10 Vdc)
Q3
(N)
—
(P)
—
(N)
—
(P)
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
—
1.0
µAdc
—
1.0
—
100
nAdc
1.5
0.074
0.152
0.058
0.118
3.88
3.0
2.0
0.100
0.180
0.090
0.160
—
—
Vdc
Ohm
Ohm
mhos
455
630
pF
420
588
184
250
290
406
45
90
116
232
11
22
ns
19
38
58
116
66
132
17
35
25
50
20
40
37
74
7.0
21
11
22
32
64
21
42
27
54
45
90
21
42
36
72
12.5
18
nC
15
20
1.3
—
1.2
—
2.8
—
5.0
—
2.4
—
4.0
—
(continued)
2
Motorola TMOS Power MOSFET Transistor Device Data