MMDF2C02HD Datasheet, PDF (3/12 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
(IS = 3.0 Adc, VAS = 0 Vdc,
dIS/dt = 100 A/µs)
VSD
trr
ta
(N)
—
(P)
—
(N)
—
(P)
—
(N)
—
(P)
—
Reverse Recovery Stored Charge
(IS = 2.0 Adc, VAS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
QRR
(N)
—
(P)
—
(N)
—
(P)
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
MMDF2C02HD
Typ
Max
Unit
0.79
1.3
Vdc
1.5
2.1
23
—
ns
38
—
18
—
17
—
5.0
—
21
—
0.025
—
µC
0.034
—
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
6
VGS = 10 V
5 ^{4.5 V}
3.9 V
3.5 V
3.7 V
TJ = 25°C
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
VGS = 10 V 4.5 V
3.9 V
3.7 V ^{TJ = 25°C}
3.5 V
3
3.3 V
2
3.1 V
1
2.9 V
2.7 V
2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
VDS ≥ 10 V
4
TJ = 100°C
25°C
2
– 55°C
0
1
1.4
1.8
2.2
2.6
3
3.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
VDS ≥ 10 V
3
2
1
100°C
25°C
TJ = – 55°C
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Motorola TMOS Power MOSFET Transistor Device Data
3