MTD6N15 Datasheet, PDF (5/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

2000
TJ = 25°C
1600
VGS = 0
1200
800
400
VDS = 0
Ciss
Coss
0
Crss
15 10 5 0 5 10 15 20 25 30 35
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance Variation
16
TJ = 25°C
ID = 6 A
12
75 V
VDS = 50 V
8
MTD6N15
120 V
4
0
0
4
8
12
16
20
Qg, TOTAL GATE CHARGE (nC)
Figure 12. Gate Charge versus
Gate–To–Source Voltage
RESISTIVE SWITCHING
PULSE GENERATOR
Rgen
50 Ω
VDD
Vin
z = 50 Ω
RL
Vout
DUT
50 Ω
td(on)
OUTPUT, Vout
INVERTED
ton
tr
90%
td(off)
10%
INPUT, Vin
50%
10%
toff
tf
90%
90%
50%
PULSE WIDTH
Figure 13. Switching Test Circuit
Figure 14. Switching Waveforms
Motorola TMOS Power MOSFET Transistor Device Data
5