MTD6N15 Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

MTD6N15
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS — continued
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
TJ = 100°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 100°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
See Figure 11
SWITCHING CHARACTERISTICS* (TJ = 100°C)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 25 Vdc, ID = 3.0 Adc,
RG = 50 Ω)
See Figures 13 and 14
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 Vdc)
See Figure 12
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
Forward Turn–On Time
Reverse Recovery Time
(IS = 6.0 Adc, di/dt = 25 A/µs
VGS = 0 Vdc,)
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
Min
Max
Unit
—
100
nAdc
—
100
nAdc
2.0
4.5
Vdc
1.5
4.0
—
0.3
Ohm
Vdc
—
1.8
—
1.5
2.5
—
mhos
—
1200
pF
—
500
—
120
—
50
ns
—
180
—
200
—
100
15 (Typ)
30
nC
8.0 (Typ)
—
7.0 (Typ)
—
1.3 (Typ)
2.0
Vdc
Limited by stray inductance
325 (Typ)
—
ns
TA TC
2.5 25
2 20
1.5 15
TC
1 10
0.5 5
00
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
2
Motorola TMOS Power MOSFET Transistor Device Data