MTD6N15 Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTD6N15
24
10 V
20
16
12
8
9V
TJ = 25°C
8V
7V
4
6V
5V
0
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
3.6
3.2
VDS = VGS
ID = 1 mA
2.8
2.4
2
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Gate–Threshold Voltage Variation
With Temperature
14
VDS = 10 V
12
TJ = 25°C
10
8
6
4
100°C
– 55°C
2
0
4
6
8
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
2
VGS = 0 V
ID = 0.25 mA
1.6
1.2
0.8
0.4
0
– 50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Breakdown Voltage Variation
With Temperature
0.30
VGS = 10 V
0.25
TJ = 100°C
0.20
25°C
0.15
– 55°C
0.10
0.05
0
0
4
8
12
16
20
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
2
VGS = 10 V
1.6 ^{ID = 3 A}
1.2
0.8
0.4
0
– 50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On–Resistance Variation
With Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3