MTD6N15 Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTD6N15/D
™ Designer's Data Sheet
Power Field Effect Transistor
DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.3 Ω Max
• Rugged — SOA is Power Dissipation Limited
• Source–to–Drain Diode Characterized for Use With
Inductive Loads
• Low Drive Requirement — VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
®
D
MTD6N15
TMOS POWER FET
6.0 AMPERES
150 VOLTS
RDS(on) = 0.3 OHM
G
CASE 369A–13, Style 2
DPAK (TO–252)
MAXIMUM RATINGS
Drain–Source Voltage
Rating
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 50 µs)
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
PD
PD
TJ, Tstg
R_θJC
R_θJA
R_θJA
Value
150
150
± 20
± 40
6.0
20
20
0.16
1.25
0.01
1.75
0.014
– 65 to +150
6.25
100
71.4
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
Watts
W/°C
Watts
W/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
150
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0 Vdc)
TJ = 125°C
IDSS
—
—
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
—
Vdc
µAdc
10
100
(continued)
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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