MRF5003 Datasheet, PDF (5/10 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

1.06
1.04
1.02
1.00
0.98
IDQ = 150 mA
0.96
75 mA
0.94
0.92
0.90 VDD = 12.5 V
0.88
25 mA
0.86
–25
0
25
50
75
100 125
TC, CASE TEMPERATURE (°C)
Figure 10. Gate–Source Voltage versus
Case Temperature
2
1.5
1
0.5
0
150
1
TC = 25°C
10
36 V
100
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
520 MHz
Zin
460 MHz
f = 400 MHz
520 MHz
460 MHz
ZOL*
f = 400 MHz
Zo = 10 Ω
VDD = 7.5 V, IDQ = 50 mA, Pout = 3.0 W
f
Zin
MHz
Ohms
ZOL*
Ohms
400
2.8 – j9.2
3.6 – j1.7
430
2.7 – j8.5
3.3 – j1.5
460
2.5 – j7.8
2.7 – j1.1
490
2.0 – j7.2
2.5 – j0.8
520
1.3 – j6.5
2.4 – j0.5
Zin = Conjugate of source impedance with parallel 35 Ω
Zin = resistor and 47 pF capacitor in series with gate.
ZOL* = Conjugate of the load impedance at given output
ZOL* = power, voltage, frequency, and η_D > 50%.
Note: Zol* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5003
5