MRF5003 Datasheet, PDF (2/10 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 2.5 mAdc)
V(BR)DSS
36
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
—
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 5.0 mAdc)
VGS(th)
1.25
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
Forward Transconductance
(VDS = 10 Vdc, ID = 0.5 Adc)
gfs
0.6
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)
Crss
3.5
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
Gps
(VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA)
f = 512 MHz
9.5
f = 175 MHz
—
Drain Efficiency
h
(VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA)
f = 512 MHz
45
f = 175 MHz
—
Typ
Max
Unit
—
—
Vdc
—
1.0
mAdc
—
1.0
µAdc
2.25
3.5
Vdc
—
0.375
Vdc
—
—
mho
16.5
—
pF
37
—
pF
4.4
5.4
pF
dB
10.5
—
15
—
%
50
—
55
—
MRF5003
2
MOTOROLA RF DEVICE DATA