MRF5003 Datasheet, PDF (1/10 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF5003/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
The MRF5003 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base
station FM equipment.
• Guaranteed Performance at 512 MHz, 7.5 Volts
Output Power = 3.0 Watts
Power Gain = 9.5 dB
Efficiency = 45%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive
• Suitable for 12.5 Volt Applications
• True Surface Mount Package
• Available in Tape and Reel by Adding R1 Suffix to Part Number.
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF5003
3.0 W, 7.5 V, 512 MHz
N–CHANNEL
BROADBAND
RF POWER FET
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 Meg Ohm)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 430–01, STYLE 2
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
36
36
± 20
1.7
12.5
0.07
– 65 to +150
200
Max
14
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF5003
1