MMDFS2P102 Datasheet, PDF (5/12 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

TYPICAL FET ELECTRICAL CHARACTERISTICS
MMDFS2P102
1200
VDS = 0 VGS = 0
1000 ^Ciss
TJ = 25°C
800
600
Crss
Ciss
400
Coss
200
Crss
0
–10 – 5.0
0
5.0
10
15
20
VGS VDS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
18
QT
16
10
14
8.0
12
6.0
4.0 ^Q1
Q2
10
VGS
8.0
ID = 2.0 A
6.0
2.0
0
0
Q3
4.0
VDS
8.0
TJ = 25°C
4.0
2.0
0
12
16
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
1000
2.0
VGS = 0 V
1.6
TJ = 25°C
100
td(off)
tf
tr
td(on)
10
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1.2
0.8
0.4
0
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
100
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10 s max.
10 ^{VGS = 20 V}
SINGLE PULSE
TC = 25°C
1.0
10 ms
1.0 ms
100 ms
dc
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
350
300
ID = 6.0 A
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Motorola TMOS Product Preview Data
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