MMDFS2P102 Datasheet, PDF (1/12 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDFS2P102/D
™ Designer's Data Sheet
FETKY™
MOSFET and Schottky Rectifier
The FETKY™ product family incorporates low RDS(on), true logic level MOSFETs
packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers
to offer high efficiency components in a space saving configuration. Independent pinouts
for TMOS and Schottky die allow the flexibility to use a single component for switching
and rectification functions in a wide variety of applications such as Buck Converter,
Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage-
ment in Battery Packs, Chargers, Cell Phones and other Portable Products.
• HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier
• Lower Component Placement and Inventory Costs along with
Board Space Savings
• Logic Level Gate Drive — Can be Driven by Logic ICs
• Mounting Information for SO–8 Package Provided
• IDSS Specified at Elevated Temperature
• Applications Information Provided
™
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) ⁽¹⁾
Rating
Symbol
Drain–to–Source Voltage
W Drain–to–Gate Voltage (RGS = 1.0 M )
VDSS
VDGR
Gate–to–Source Voltage — Continuous
Drain Current ⁽³⁾ — Continuous @ TA = 25°C
v m ^{— Continuous @ TA = 100°C}
— Single Pulse (tp 10 s)
Total Power Dissipation @ TA = 25°C ⁽²⁾
VGS
ID
ID
IDM
PD
W ^{Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C}
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
EAS
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current ⁽³⁾ (Rated VR) TA = 100°C
Peak Repetitive Forward Current ⁽³⁾ (Rated VR, Square Wave, 20 kHz) TA = 105°C
VRRM
VR
IO
Ifrm
Non–Repetitive Peak Surge Current
Ifsm
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
MMDFS2P102
P–Channel Power MOSFET
with Schottky Rectifier
20 Volts
RDS(on) = 0.16 W
VF = 0.39 Volts
CASE 751–05, Style 18
(SO– 8)
18
A
C
A
27
C
6
S
3
D
G
D
45
TOP VIEW
Value
20
20
"20
3.3
2.1
20
2.0
324
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
mJ
20
Volts
1.0
Amps
2.0
Amps
20
Amps
DEVICE MARKING
ORDERING INFORMATION
2P102
Device
MMDFS2P102R2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
(3) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
FETKY is a trademark of International Rectifier.
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