MMDFS2P102 Datasheet, PDF (3/12 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

MMDFS2P102
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) ⁽¹⁾
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
—
25
—
Vdc
—
mV/°C
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS ⁽²⁾
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
IDSS
—
—
—
—
IGSS
—
—
VGS(th)
1.0
1.5
—
4.0
µAdc
1.0
10
100
nAdc
Vdc
2.0
—
mV/°C
Static Drain–Source Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS ⁽³⁾
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On–Voltage ⁽²⁾
Reverse Recovery Time
(IS = 2.0 Adc,
VGS = 0 Vdc)
(IS = 2.0 Adc, VDD = 15 V,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
RDS(on)
—
—
gFS
2.0
Ciss
—
Coss
—
Crss
—
td(on)
—
tr
—
td(off)
—
tf
—
QT
—
Q1
—
Q2
—
Q3
—
VSD
—
trr
—
ta
—
tb
—
QRR
—
0.118
0.152
3.0
420
290
116
19
66
25
37
15
1.2
5.0
4.0
1.5
38
17
21
0.034
0.160
0.180
—
Ohms
mhos
588
pF
406
232
38
ns
132
50
74
20
nC
—
—
—
V
2.1
—
ns
—
—
—
µC
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage ⁽²⁾
IF = 1.0 A
IF = 2.0 A
VF
TJ = 25°C
0.47
0.58
TJ = 125°C
0.39
0.53
Volts
Maximum Instantaneous Reverse Current ⁽²⁾
VR = 20 V
IR
TJ = 25°C
TJ = 125°C
mA
0.05
10
Maximum Voltage Rate of Change
VR = 20 V
(1) Negative sign for P–channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%.
(3) Switching characteristics are independent of operating temperature.
dV/dt
10,000
V/ms
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