MMDFS2P102 Datasheet, PDF (4/12 Pages) Motorola, Inc – P-Channel Power MOSFET with Schottky Rectifier 20 Volts

MMDFS2P102
TYPICAL FET ELECTRICAL CHARACTERISTICS
4.0
4.0
10 V 4.5 V 3.8 V
TJ = 25°C
VDS ≥ 10 V
3.0
3.0
2.0
3.1 V
1.0
VGS = 2.4 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2.0
1.0
0
1.0
25°C
100°C
TJ = – 55°C
1.5
2.0
2.5
3.0
3.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
0.20
TJ = 25°C
TJ = 25°C
0.5
ID = 1.0 A
0.16
VGS = 4.5 V
0.4
0.3
0.2
0.1
0
0
2.0
4.0
6.0
8.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.12
10 V
0.08
0.04
10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
VGS = 10 V
1.4
ID = 2.0 A
1.2
1.0
0.8
0.6
–50 –25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
100°C
1.0
0
5.0
10
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
4
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