MMBR941LT1 Datasheet, PDF (5/17 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

TYPICAL CHARACTERISTICS
MRF947 SERIES
150
130
1
Cob
0.5
Ccb
0.2
0.1
1
2
5
10
20 30
REVERSE VOLTAGE (V)
Figure 10. Capacitance versus Voltage
8
6
VCE = 6 V
4
2
110
90
70
50
0.1
0.5
12
5 10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. DC Current Gain versus Collector Current
15
5
GNF
13
VCE = 6 V ⁴
f = 1 GHz
11
3
NF
9
2
7
1
0
1
2 3 45
10 15 20 30
IC, COLLECTOR CURRENT (mA)
Figure 12. Gain–Bandwidth Product
versus Collector Current
5
0
12
5 10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Associated Gain and Minimum
Noise Figure versus Collector Current
32
28
MSG
24
VCE = 6 V
IC = 5 mA
20
MAG
16
12
MSG
8
Å¥_S21Å¥ 2
4
0
0.1
0.2 0.3 0.5
1
23
5
f, FREQUENCY (GHz)
Figure 14. Forward Insertion Gain and Maximum
Stable/Available Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–5