MMBR941LT1 Datasheet, PDF (4/17 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

FORWARD INSERTION GAIN AND
MAXIMUM UNILATERAL GAIN versus FREQUENCY
30
30
IC = 15 mA
IC = 15 mA
25
VCE = 6 V
25
VCE = 6 V
20
20
15
GUmax
10
|S21|2
5
0
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
f, FREQUENCY, (GHz)
Figure 5. MMBR941LT1, T3
15
GUmax
10
|S21|2
5
0
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
f, FREQUENCY, (GHz)
Figure 6. MRF9411LT1
24
VCE = 6 V
20
IC = 5 mA
MRF9411LT1
16
MMBR941LT1, T3
MRF947
12
8 CIRCUIT — FIGURE 9
4
NF50 _Ω
NFmin
0
0.1
0.2 0.3 0.5 0.7 1
23
f, FREQUENCY, (GHz)
6
5
4
3
2
1
0
5 7 10
Figure 7. Noise Figure and Associated Gain
versus Frequency
VBE
6
5
VCE = 6 V
4
3
NFmin @ 2 GHz
2
NFmin @ 1 GHz
1
0
1
2 3 5 7 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Minimum Noise Figure versus
Collector Current
VCE
RF INPUT
BIAS *SLUG TUNER
NETWORK
DUT
*SLUG TUNER BIAS
NETWORK
RF OUTPUT
Figure 9. Functional Circuit Schematic (all devices)
*MICROLAB/FXR
**SF – 11N < 1 GHz
**SF – 31IN ≥ 1 GHz
MMBR941 MRF947 MRF9411 SERIES
2–4
MOTOROLA RF DEVICE DATA