MMBR941LT1 Datasheet, PDF (2/17 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

MAXIMUM RATINGS
Rating
Symbol MMBR941LT1, T3
MRF9411LT1
MRF947 Series
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance,
Junction to Case
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R_θJC
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
10
20
1.5
0.188
2.5
50
150
– 55 to +150
400
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKING
MMBR941LT1 = 7Y
MRF9411LT1 = 10
MMBR941BLT1 = 7N
MRF947AT1 = G
MRF947T1, T3 = A
MRF947BT1 = H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO 10
12
—
Vdc
All
V(BR)CBO 20
23
—
Vdc
All
IEBO
—
—
0.1
µAdc
All
ICBO
—
—
0.1
µAdc
All
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1)
(MMBR941BLT1)
hFE
—
50
—
200
100
—
200
DC Current Gain (VCE = 1.0 V, IC = 500 µA) MRF947T1, MRF947BT1
hFE1
50
—
—
—
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
MRF947T1, T3
MRF947AT1
MRF947BT1
—
hFE2
50
—
—
hFE3
75
—
150
hFE4
100
—
200
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
—
0.35
—
pF
All
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
fT
—
8.0
—
GHz
All
NOTE:
1. To calculate the junction temperature use TJ = PD x R_θJC + TCASE. Case temperature measured on collector lead immediately adjacent to
body of package.
2. IC — Continuous (MTBF ≈ 10 years).
3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
MMBR941 MRF947 MRF9411 SERIES
2–2
MOTOROLA RF DEVICE DATA