MMBR941LT1 Datasheet, PDF (3/17 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

PERFORMANCE CHARACTERISTICS
Conditions
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
Symbol
|S21|2
MRF9411LT1
MMBR941LT1, T3 MRF947 Series
Unit
Min Typ Max Min Typ Max Min Typ Max
dB
— 16 — — 14 — — 14 —
— 10 — — 8.0 — — 10.8 —
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
GU _max
dB
— 18 — — 16 — — 14.8 —
— 12 — — 10 — — 11.6 —
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
NFMIN
dB
— 1.5 — — 1.5 — — 1.5 —
— 2.1 — — 2.1 — — 2.1 —
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
GNF
dB
— 15 — — 14 — — 14 —
— 9.5 — — 8.5 — — 10 —
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NF50 _Ω — 1.9 2.8 — 1.9 2.8 — 1.9 2.8 dB
NOTE:
1. Maximum
Unilateral
Gain
is
GUmax
=
|S21|2
(1 – |S11|2)(1 – |S22|2)
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1
1
0.7
300
0.5
200
0.3
100
f = 1 MHz
70
50
0.2
30
20
0.1
10
1
2
3
5
7
10
1
VCB, REVERSE VOLTAGE (V)
Figure 1. Collector–Base Capacitance
versus Voltage
VCE = 6 V
2 3 5 7 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 2. DC Current Gain versus
Collector Current
12
24
10
20
8
6
4
2
VCE = 6 V
f = 1 GHz
0
1
23
5 7 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Gain Bandwidth Product versus
Collector Current
16
MRF9411LT1
12
MMBR941LT1, T3
8
4
VCE = 6 V
f = 1 GHz
0
1
23
5 7 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–3