BDW42 Datasheet, PDF (5/6 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors

BDW42 BDW46 BDW47
+ 5.0
+ 5.0
v ^{+ 4.0}
*IC/IB 250
+ 3.0
+ 2.0
25°C to 150°C
+ 4.0
v *IC/IB 250
+ 3.0
+ 2.0
+ 25°C to 150°C
+ 1.0
+ 1.0
– 55°C to 25°C
0
0
– 1.0
*θ_VC for VCE(sat)
– 2.0
– 3.0
θ_VB for VBE
– 4.0
25°C to 150°C
– 55°C to 25°C
– 1.0 _{*θVC for VCE(sat)}
– 2.0
– 3.0
θ_VB for VBE
– 55°C to + 25°C
+ 25°C to 150°C
– 4.0
– 55°C to +25°C
– 5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
– 5.0
0.1 0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
102
TJ = 150°C
101
100°C
100
25°C
10– ¹
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
100
100°C
10– ¹
25°C
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region
NPN
BDW42
COLLECTOR
PNP
BDW46
BDW47
COLLECTOR
BASE
[ [ 8.0 k
60
BASE
[ [ 8.0 k
60
EMITTER
Figure 14. Darlington Schematic
EMITTER
3–216
Motorola Bipolar Power Transistor Device Data