BDW42 Datasheet, PDF (4/6 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors

BDW42 BDW46 BDW47
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
20,000
10,000
5000 _{TJ = 150°C}
3000
2000
25°C
VCE = 3.0 V
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
VCE = 3.0 V
1000
– 55°C
500
1000
700
– 55°C
500
300
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
300
200
0.1
IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
3.0
2.6
IC = 2.0 A 4.0 A
6.0 A
2.2
TJ = 25°C
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
1.0
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
20 30
2.0
2.0
1.5 ^{VBE(sat) @ IC/IB = 250}
1.5 VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.0 ^{VBE(sat) @ IC/IB = 250}
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 11. “On” Voltages
Motorola Bipolar Power Transistor Device Data
3–215