BDW42 Datasheet, PDF (3/6 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors

BDW42 BDW46 BDW47
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
R_θJC(t) = r(t) R_θJC
R_θJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
20
10 ^{TJ = 25°C}
5.0
0.1 ms
1.0 ms
0.5 ms
2.0
SECOND BREAKDOWN LIMIT _dc
BONDING WIRE LIMIT
1.0
THERMAL LIMITED
0.5
@ TC = 25°C (SINGLE PULSE)
50
20
10 ^{TJ = 25°C}
5.0
0.1 ms
1.0 ms
0.5 ms
SECOND BREAKDOWN LIMIT
2.0
BONDING WIRE LIMIT
dc
1.0
THERMAL LIMITED
0.5
@ TC = 25°C (SINGLE PULSE)
0.2
0.1
0.05
1.0
BDW42
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. BDW42
0.2
0.1
0.05
1.0
BDW46
BDW47
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the
curves indicate. The data of Fig. 5 and 6 is based on TJ(pk) =
200_C; TC is variable depending on conditions. Second break-
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
BDW46, 47 (PNP)
BDW42 (NPN)
2.0 5.0 10 20
50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 7. Small–Signal Current Gain
v ^{down pulse limits are valid for duty cycles to 10% provided}
TJ(pk) 200_C. TJ(pk) may be calculated from the data in
Fig. 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the li-
mitations imposed by second breakdown.
* Linear extrapolation
300
TJ = + 25°C
200
100
Cob
70
Cib
50
30
0.1 0.2
BDW46, 47 (PNP)
BDW42 (NPN)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
3–214
Motorola Bipolar Power Transistor Device Data