MRF183R1 Datasheet, PDF (4/12 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
− 20
− 25 V_DD = 28 Vdc
− 30 ^{IDQ = 250 mA}
f1 = 945 MHz
− 35 _{f2 = 945.1 MHz}
− 40
− 45
3rd ORDER
5th
− 50
− 55
7th
− 60
− 65
− 70
0 5 10 15 20 25 30 35 40 45 50
P_out, OUTPUT POWER (WATTS) PEP
Figure 2. Intermodulation Distortion Products
versus Output Power
16
I_DQ = 450 mA
15.5
285 mA
15
V_DD = 28 Vdc
f = 945 MHz
−20
− 25
I_DQ = 75 mA
− 30
− 35
− 40
150 mA
− 45
− 50
− 55
0.1
250 mA
450 mA
V_DD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Intermodulation Distortion versus
Output Power
60
16
50
15
G_pe
40
14
14.5
150 mA
14
13.5
75 mA
13
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 4. Power Gain versus Output Power
30
13
P_out
20
12
10
V_DD = 28 Vdc
I_DQ = 75 mA
11
f = 945 MHz
0
10
0 0.5 1 1.5 2 2.5 3 3.5 4
P_in, INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
90
80
P_in = 4.0 W
70
60
2.0 W
50
40
1.0 W
30
20
V_DD = 28 Vdc
10
I_DQ = 75 mA
f1 = 945 MHz
0
15 17 19 21 23 25 27 29 31 33 35
V_DS, DRAIN VOLTAGE (VOLTS)
Figure 6. Output Power versus Drain Bias
Supply Voltage
50
45
40
35
30
TYPICAL DEVICE SHOWN
25
V_GS(th) TYPICAL = 3.13 V
20
15
10
V_DD = 28 Vdc
5
P_in = 1.5 W
f1 = 945 MHz
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_GS, GATE BIAS (VOLTS)
Figure 7. Output Power versus Gate Bias
Supply Voltage
MRF183R1 MRF183LSR1
4
MOTOROLA RF DEVICE DATA
Archived 2005